Complementary metal-oxide semiconductor compatible source of single photons at near-visible wavelengths

Single-photon imaging in complementary metal oxide semiconductor processes

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging...

Complementary metal–oxide–semiconductor compatible high efficiency subwavelength grating couplers for silicon integrated photonics

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Surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor with 14:1 continuous tuning range

A single-crystal source of path-polarization entangled photons at non-degenerate wavelengths.

We demonstrate a bright, narrowband, compact, quasi-phase-matched single-crystal source generating path-polarization-entangled photon pairs at 810 nm and 1550 nm at a maximum rate of 3 x 10(6) s(-1) THz(-1) mW(-1) after coupling to single-mode fiber, and with two-photon interference visibility above 90%. While the source can already be used to implement quantum communication protocols such as q...

III-V complementary metal-oxide-semiconductor electronics on silicon substrates.

One of the major challenges in further advancement of III-V electronics is to integrate high mobility complementary transistors on the same substrate. The difficulty is due to the large lattice mismatch of the optimal p- and n-type III-V semiconductors. In this work, we employ a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound sem...